This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching. Monolithic linear ic la78045 tv and crt display vertical. Monolithic linear ic la78045 tv and crt display vertical support. The utc 4n60 is a high voltage mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low onstate resistance. Recent listings manufacturer directory get instant insight into any electronic component. Aa absolute maximum ratings tc 25, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 4. Toshiba bipolar linear integrated circuit silicon monolithic ta8264ah max power 41 w btl. Jun 26, 2017 g80n60 datasheet vces 660v, ultrafast igbt fairchild, sgh80n60ufd datasheet, g80n60 pdf, g80n60 pinout, g80n60 equivalent, circuit, g80n60 schematic. Toshiba bipolar linear integrated circuit silicon monolithic. Toshiba field effect transistor silicon n channel mos type. Pure storage flasharrayx, the worlds first 100% allflash endtoend nvme and nvmeof array, now optionally includes a storage class memory boost to address the most demanding enterprise applications performance requirements. C5172 lot 116h9432 infrared spectrum kbr dispersion wavenumbers cm1 hc hc c o oh c o oh chch2ch2n n cl ch3 ch3 4000 3600 3200 2800 2400 2000 1600 1200 800 400 20 40 60 80 100 % t r a n s m i t t a n c e kbr 100 sigma brand products are sold through sigmaaldrich, inc.
O absolute maximum ratings tc25c unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 10 a drain current continuous id 10 a pulsed note 2 idm 38 a avalanche energy. Fqp8n60cfqpf8n60c 600v nchannel mosfet general description these nchannel enhancement mode power field effect transistors are produced using fairchilds proprietary, planar stripe, dmos technology. Please note the new package dimensions arccording to pcn 20094a rev. March 2007 rev 1 112 12 stp60nf06fp nchannel 60v 0.
Units conditions is continuous source current mosfet symbol. Infineon, alldatasheet, datasheet, datasheet search site for. Part number top mark package reel size tape width quantity fqp5n60c fqp5n60c to220 na na 50 units packing method tube fqpf5n60c fqpf5n60c to220f tube na na 50 units notes. Cool mos power transistor, spa04n60c2 datasheet, spa04n60c2 circuit, spa04n60c2 data sheet. Poutmax 41 w as it is included the pure complementary pnp and npn transistor output stage. Germanium diodes 1 cold bonded germanium diodes in do7 package mm type aa1 aa117 aa118 aa119 aa8 aa143 aa144 aaz15 aaz17 aaz18 oa47 oa79 oa90 oa91 oa95 oa99 1n34a 1n38a 1n60a 1n100a 1n27q 1n276 1n277 1n695 1n695a 1n933 1n949 1n3287 1n3592 1n3666 1n3773 peak inverse voltage min. Static characteristics tj 25c unless otherwise stated. Package marking and ordering information 2003 fairchild semiconductor corporation fqp5n60c. Part number top mark package reel size tape width quantity fqp2n60c fqp2n60c to220 na na 50 units packing method tube fqpf2n60c fqpf2n60c to220f tube na na 50 units notes.
Fqp5n60c fqpf5n60c d nchannel qfet mosfet electrical characteristics tc 25c unless otherwise noted. Chlorpheniramine maleate sigma reference standard product no. Spp11n60c3 mosfet nch 650v 11a to220ab infineon technologies datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Csd18504q5a 40v nchannel nexfet power mosfet datasheet. Source absolute maximum ratings ta 25c item symbol ratings unit drain to source voltage vdss 300 v gate to. Absolute maximum ratings are those values beyond which the device could be permanently damaged. With 12gbs sas interface and hddssd hybrid capability, the platform is designed for data centers that need a dense solution with ha capabilities, while maintaining a low power profile. Mosiii 2sk2700 chopper regulator, dcdc converter and motor drive. Csd18533kcs 60 v nchannel nexfet power mosfet datasheet. L absolute maximum ratings tc 25c, unless otherwise specified parameter symbol ratings unit drainsource voltage vdss 600 v gatesource voltage vgss 30 v avalanche current note 2 iar 6. Please note the new package dimensions arccording to pcn 2009.
The ufd series is designed for applications such as motor. Ixys mosfets and igbts are covered by one or more of the following u. Please note the new package dimensions arccording to pcn. If the checkbox is invisible, the corresponding document cannot be downloaded in batch. Piv volts 65 90 90 45 25 30 100 100 75 40 25 40 30. Apr 04, 2015 4n60 datasheet pdf 4n60 datasheet pdf 4n60 datasheet pdf download. B1 igbt sgh80n60ufd sgh80n60ufd ultrafast igbt general description fairchilds ufd series of insulated gate bipolar transistors igbts provides low conduction and switching losses. Germanium glass diode 1n601n60p taitron components. The utc 4n60 is a high voltage power mosfet and is designed to have better characteristics, such as. Datasheet search engine for electronic components and semiconductors. Y2010dn datasheet pdf, y2010dn datasheet, y2010dn pdf, y2010dn pinout, y2010dn data, circuit, ic, manual, substitute, parts, schematic, reference.
Data sheet pure storage flasharrayx accelerate core applications and provide a modern data experience. Fqp2n60c fqpf2n60c nchannel qfet mosfet electrical characteristics tc 25c unless otherwise noted. G80n60 datasheet vces 660v, ultrafast igbt fairchild, sgh80n60ufd datasheet, g80n60 pdf, g80n60 pinout, g80n60 equivalent, circuit, g80n60 schematic. With 12gbs sas interface and hddssd hybrid capability, the platform is designed for data centers that need a dense solution with ha capabilities, while maintaining a. H5n3011p silicon n channel mos fet high speed power switching rej03g03850200 rev. Utc 4 amps, 600 volts nchannel power mosfet,alldatasheet, datasheet, datasheet search site for. July 94 features 100 volt vceo 2 amp continuous current low saturation voltage ptot1 watt absolute maximum ratings. Mosvi 2sk4111 switching regulator applications low drainsource on resistance.
Zetex ztx753 silicon planar medium power transistor datasheet vceo 100v 2a continuous current low saturation voltage ptot1 watt. G80n60 datasheet vces 660v, ultrafast igbt fairchild. Tstg storage temperature range soldering temperature, for 10 seconds 300 1. Apr 04, 2015 4n60b datasheet pdf download pdf 2249741219049103.
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